AO4404(2001) 查看數據表（PDF） - Alpha and Omega Semiconductor
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AO4404 Datasheet PDF : 4 Pages
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July 2001
AO4404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4404 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in
PWM applications. The source leads are separated
to allow a Kelvin connection to the source, which
may be used to bypass the source inductance.
Features
VDS (V) = 30V
ID = 8.5A
RDS(ON) < 24mΩ (VGS = 10V)
RDS(ON) < 30mΩ (VGS = 4.5V)
RDS(ON) < 48mΩ (VGS = 2.5V)
S
D
S
D
S
D
G
D
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±12
Continuous Drain TA=25°C
8.5
Current A
TA=70°C
ID
7.1
Pulsed Drain Current B
IDM
60
Power Dissipation
TA=25°C
TA=70°C
PD
3
2.1
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
31
59
40
75
Maximum Junction-to-Lead C
Steady-State
RθJL
16
24
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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