AO3413(2010) 查看數據表（PDF） - Alpha and Omega Semiconductor
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AO3413 Datasheet PDF : 5 Pages
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AO3413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=-10V
ID=-3A
4
3
2
1
0
0
2
4
6
8
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
1400
1200
1000
800
Ciss
600
-15
400
200
Coss
0
Crss
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.00
10.00
RDS(ON)
limited
1.00
0.10
TJ(Max)=150°C
TA=25°C
10µs
100µs
1ms
10ms
0.1s
1s
DC
0.01
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1000
100
TJ(Max)=150°C
TA=25°C
10
1
0.1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
12
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
1000
Rev 9: July 2010
www.aosmd.com
Page 4 of 5
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