AO3415L 查看數據表（PDF） - Alpha and Omega Semiconductor
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AO3415L Datasheet PDF : 4 Pages
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AO3415, AO3415L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=-10V
4
ID=-4A
3
2
1
0
0
5
10
15
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
2400
2000
Ciss
1600
1200
800
Coss
400
Crss
0
0
5
10
15
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
TJ(Max)=150°C
TA=25°C
RDS(ON)
10.0 limited
10µs
100µs
1ms
1.0
1s
10ms
10s
0.1s
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
Ton
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
Alpha & Omega Semiconductor, Ltd.
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