AO3420L 查看數據表（PDF） - Alpha and Omega Semiconductor

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AO3420L

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO3420

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3420 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V VGS(MAX) rating. This device is

suitable for use as a uni-directional or bi-directional

load switch. Standard Product AO3420 is Pb-free

(meets ROHS & Sony 259 specifications). AO3420L

is a Green Product ordering option. AO3420 and

AO3420L are electrically identical.

Features

VDS (V) = 20V

ID = 6 A (VGS = 10V)

RDS(ON) < 24mΩ (VGS = 10V)

RDS(ON) < 27mΩ (VGS = 4.5V)

RDS(ON) < 42mΩ (VGS = 2.5V)

RDS(ON) < 55mΩ (VGS = 1.8V)

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

20

±12

6

5

25

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

70

100

Maximum Junction-to-Lead C

Steady-State

RθJL

63

Max

90

125

80

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

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