AO3422(2010) 查看數據表（PDF） - Alpha and Omega Semiconductor
零件编号
产品描述 (功能)
生产厂家
AO3422 Datasheet PDF : 5 Pages
| |||
AO3422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 2.5V to
12V. This device is suitable for use as a load switch.
Features
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 4.5V)
RDS(ON) < 200mΩ (VGS = 2.5V)
SOT23
D
Top View
Bottom View
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
75
115
100
150
Maximum Junction-to-Lead C
Steady-State
RθJL
48
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Share Link: 