AO3438 查看數據表（PDF） - Alpha and Omega Semiconductor

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AO3438

N-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO3438

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AO3438 uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. AO3438 and AO3438L are eletrically

identical.

-RoHs Compliant

-AO3438L is Halogen Free

Features

VDS = 20V

ID = 3A

RDS(ON) < 62mΩ

RDS(ON) < 70mΩ

RDS(ON) < 85mΩ

(V GS = 4.5V)

(VGS = 4.5V)

(VGS = 2.5V)

(VGS = 1.8V)

TO-236

(SOT-23)

Top View

G

D

S

D

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

20

±8

3

2.5

16

1.4

0.9

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

70

100

Maximum Junction-to-Lead C

Steady-State

RθJL

63

Max

90

125

80

Alpha & Omega Semiconductor, Ltd.

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

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