AO4427 查看數據表（PDF） - Unspecified
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AO4427 Datasheet PDF : 4 Pages
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AO4427
30V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
VDS=-15V
ID=-12.5A
8
6
4
2
3000
2500
2000
1500
Coss
1000
500
Ciss
Crss
0
0 5 10 15 20 25 30 35 40 45
-Qg (nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
RDS(ON)
limited
10.0
100µs 10µs
1ms
V10GmS=s -10V, VDS=-15V,
0.1s
1.0
1s
10s
TJ(Max)=150°C
TA=25°C
DC
0.1
0.1
1
10
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
40
30
ID=-12.5A
20
TJ(Max)=150°C
TA=25°C
10
0
0.001 0.01 0.1
1
10
100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=40°C/W
THIS PRO1 DUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCT0IO.1NS AND RELIABILITY WITHOUT NOTICE.
PD
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
10
100
Figure 11: Normalized Maximum Transient Thermal Impedance
1000
4/4
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