AM4480N-T1-XX 查看數據表（PDF） - Unspecified

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AM4480N-T1-XX

N-Channel 80-V (D-S) MOSFET

Unspecified 

Freescale

AO4448L/MC4448

Electrical Characteristics

Parameter

Symbol

Test Conditions

Min

Static

Gate-Source Threshold Voltage VGS(th)

VDS = VGS, ID = 250 uA

1

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ±20 V

Zero Gate Voltage Drain Current

IDSS

VDS = 64 V, VGS = 0 V

VDS = 64 V, VGS = 0 V, TJ = 55°C

On-State Drain Current

ID(on)

VDS = 5 V, VGS = 10 V

20

Drain-Source On-Resistance

rDS(on)

VGS = 10 V, ID = 5.4 A

VGS = 4.5 V, ID = 4.6 A

Forward Transconductance

gfs

VDS = 15 V, ID = 5.4 A

Diode Forward Voltage

VSD

IS = 2 A, VGS = 0 V

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Qg

Qgs

Qgd

td(on)

tr

td(off)

VDS = 40 V, VGS = 4.5 V, ID = 5.4 A

VDD = 40 V, RL = 7.5 Ω , ID = 5.4 A,

VGEN = 10 V, RGEN = 6 Ω

Fall Time

tf

Input Capacitance

Output Capacitance

Ciss

Coss

VDS = 15 V, VGS = 0 V, f =1 MHz

Reverse Transfer Capacitance

Crss

Typ

20

0.76

19.5

4.5

10

12.8

24

52.3

46

1522

129

87

Max

±10

1

10

41

57

Unit

V

uA

uA

A

mΩ

S

V

nC

ns

pF

Notes

a. Pulse test: PW <= 300us duty cycle <= 2%.

b. Guaranteed by design, not subject to production testing.

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consequential or incidental damages. “Typical” parameters which may be provided in freescale data sheets and/or specifications can and do vary

in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each

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