AO4815 查看數據表（PDF） - Alpha and Omega Semiconductor

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AO4815

Dual P-Channel Enhancement Mode Field Effect Transistor

Alpha and Omega Semiconductor 

AO4815

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

The AO4815 uses advanced trench technology to

provide excellent RDS(ON), and ultra-low low gate

charge with a 25V gate rating. This device is suitable

for use as a load switch or in PWM applications. The

device is ESD protected. Standard Product AO4815

is Pb-free (meets ROHS & Sony 259 specifications).

AO4815L is a Green Product ordering option.

AO4815 and AO4815L are electrically identical.

Features

VDS (V) = -30V

ID = -8A (VGS = -20V)

RDS(ON) < 18mΩ (VGS = -20V)

RDS(ON) < 20mΩ (VGS = -10V)

ESD Rating: 2KV HBM

S2 1 8 D2

G2 2 7 D2

S1 3 6 D1

G1 4 5 D1

SOIC-8

D1

D2

G1

G2

S1

S2

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain TA=25°C

Current A

TA=70°C

ID

Pulsed Drain Current B

IDM

TA=25°C

Power Dissipation A TA=70°C

PD

Junction and Storage Temperature Range TJ, TSTG

Maximum

-30

±25

-8

-6.9

-40

2

1.44

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A

Maximum Junction-to-Ambient A

t ≤ 10s

Steady-State

RθJA

50

73

Maximum Junction-to-Lead C

Steady-State

RθJL

31

Max

62.5

110

40

Units

V

V

A

W

°C

Units

°C/W

°C/W

°C/W

Alpha & Omega Semiconductor, Ltd.

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