AO4900A 查看數據表（PDF） - Alpha and Omega Semiconductor

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AO4900A

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

Alpha and Omega Semiconductor 

AO4900A

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

IDSS

Zero Gate Voltage Drain Current

VDS=24V, VGS=0V

TJ=55°C

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±12V

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

0.7

ID(ON)

On state drain current

VGS=4.5V, VDS=5V

40

VGS=10V, ID=6.9A

RDS(ON) Static Drain-Source On-Resistance

VGS=4.5V, ID=6A

TJ=125°C

VGS=2.5V, ID=5A

gFS

Forward Transconductance

VDS=5V, ID=5A

10

VSD

Diode Forward Voltage

IS=1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

SWITCHING PARAMETERS

Qg

Total Gate Charge

Qgs

Gate Source Charge

VGS=4.5V, VDS=15V, ID=8.5A

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

tD(off)

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=15V, RL=1.8Ω,

RGEN=6Ω

tf

Turn-Off Fall Time

trr

Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs

Qrr

Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs

SCHOTTKY PARAMETERS

VF

Forward Voltage Drop

IF=1.0A

VR=30V

Irm

Maximum reverse leakage current

VR=30V, TJ=125°C

VR=30V, TJ=150°C

CT

Junction Capacitance

VR=15V

Typ Max Units

V

0.002 1

µA

5

100 nA

1

1.5

V

A

20 27

mΩ

25 40

23

32 mΩ

34

50 mΩ

26

S

0.71 1

V

4.5

A

900 1100 pF

88

pF

65

pF

0.95 1.5 Ω

10 12 nC

1.8

nC

3.75

nC

3.2

ns

3.5

ns

21.5

ns

2.7

ns

16.8 20

ns

8

12 nC

0.45 0.5

V

0.007 0.05

3.2 10 mA

12 20

37

pF

A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA

curve provides a single pulse rating.

Rev 0 : Feb 2006

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.

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