HGTG12N60B3(2003) 查看數據表（PDF） - Fairchild Semiconductor
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HGTG12N60B3 Datasheet PDF : 8 Pages
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HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Typical Performance Curves Unless Otherwise Specified (Continued)
55
RG = 25Ω, L = 1mH, VCE = 480V
50
45
40
TJ = 25oC, TJ = 150oC, VGE = 10V
35
TJ = 25oC, TJ = 150oC, VGE = 15V
30
25
20
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
RG = 25Ω, L = 1mH, VCE = 480V
275
250
225 TJ = 150oC, VGE = 10V, VGE = 15V
200
TJ = 25oC, VGE = 10V, VGE = 15V
175
150
125
100
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
180
DUTY CYCLE <0.5%, VCE = 10V
160 PULSE DURATION = 250µs
TC = -55oC
TC = 25oC
140
120
100
80
TC = 150oC
60
40
20
0
4 5 6 7 8 9 10 11 12 13 14 15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
150
RG = 25Ω, L = 1mH, VCE = 480V
125 TJ = 25oC, TJ = 150oC, VGE = 10V
100
75
50
25
TJ = 25oC and TJ = 150oC, VGE = 15V
0
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
140
RG = 25Ω, L = 1mH, VCE = 480V
130
120
110
TJ = 150oC, VGE = 10V, VGE = 15V
100
90
80
TJ = 25oC, VGE = 10V OR 15V
70
60
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
15
Ig (REF) = 1mA, RL = 25Ω, TC = 25oC
12
VCE = 600V
9
6
VCE = 400V
VCE = 200V
3
0
0 5 10 15 20 25 30 35 40 45 50
Qg, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORM
©2002 Fairchild Semiconductor Corporation
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
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