HGTG12N60B3D 查看數據表（PDF） - Fairchild Semiconductor
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HGTG12N60B3D
Fairchild Semiconductor
HGTG12N60B3D Datasheet PDF : 7 Pages
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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HGTG12N60B3D, HGTP12N60B3D,
HGT1S12N60B3DS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
600
27
12
110
±20
±30
96A at 600V
104
0.83
Reverse Voltage Avalanche Energy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
100
-55 to 150
300
260
5
10
UNITS
V
A
A
A
V
V
W
W/oC
mJ
oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON
EOFF
IC = 250µA, VGE = 0V
VCE = BVCES
TC = 25oC
TC = 150oC
IC = IC110,
VGE = 15V
TC = 25oC
TC = 150oC
IC = 250µA, VCE = VGE
VGE = ±20V
TJ = 150oC, RG = 25Ω, VGE = 15V
L = 100µH, VCE = 600V
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
VGE = 20V
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 25Ω
L = 1mH
Test Circuit (Figure 19)
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 25Ω
L = 1mH
Test Circuit (Figure 19)
MIN TYP MAX UNITS
600
-
-
V
-
-
250
µA
-
-
2.0
mA
-
1.6
2.1
V
-
1.7
2.5
V
4.5
4.9
6.0
V
-
-
±250
nA
96
-
-
A
-
7.3
-
V
-
51
60
nC
-
68
78
nC
-
26
-
ns
-
23
-
ns
-
150
-
ns
-
62
-
ns
-
304
350
µJ
-
250
350
µJ
-
22
-
ns
-
23
-
ns
-
280
295
ns
-
112
175
ns
-
500
525
µJ
-
660
800
µJ
©2001 Fairchild Semiconductor Corporation
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Rev. B
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