HGTG12N60B3D 查看數據表（PDF） - Intersil
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HGTG12N60B3D Datasheet PDF : 7 Pages
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HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Diode Forward Voltage
Diode Reverse Recovery Time
Thermal Resistance Junction To Case
VEC
trr
RθJC
IEC = 12A
IEC = 12A, dIEC/dt = 200A/µs
IEC = 1.0A, dIEC/dt = 200A/µs
IGBT
Diode
-
1.7
2.1
V
-
32
40
ns
-
23
30
ns
-
-
1.2
oC/W
-
-
1.9
oC/W
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
30
25
20
15
10
5
0
25
VGE = 15V
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
100
90 TJ = 150oC, RG = 25Ω, VGE = 15V, L = 100µH
80
70
60
50
40
30
20
10
0
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
300
TJ = 150oC, RG = 25Ω, L = 1mH, VCE = 480V TC
VGE
100
75oC 15V
75oC 10V
110oC 15V
110oC 10V
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RθJC = 1.2oC/W, SEE NOTES
1
2
3
10
20
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
16
14
12
10
8
6
4
2
10
VCE = 360V, RG = 25Ω, TJ = 125oC
100
90
ISC
80
70
60
50
tSC
40
11
12
13
14
VGE, GATE TO EMITTER VOLTAGE (V)
30
15
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
3
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