AO4818B 查看數據表（PDF） - Unspecified

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AO4818B

30V Dual N-channel MOSFET

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AO4818B

30V Dual N-channel MOSFET

General Description

The AO4818B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This

device is suitable for use as a load switch or in PWM applications.

Features

VDS

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

RDS(ON) (at VGS = 4.5V)

30V

8A

<19mΩ

< 26mΩ

Top View

S2 1

G2 2

S1 3

G1 4

8 D2

7

D2

6 D1

5 D1

D

G

G

S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

TA=25°C

Current

TA=70°C

Pulsed Drain Current C

Avalanche Current C

Avalanche energy L=0.1mH C

ID

IDM

IAS, IAR

EAS, EAR

TA=25°C

Power Dissipation B TA=70°C

PD

Junction and Storage Temperature Range

TJ, TSTG

Maximum

30

±20

8

6.5

48

19

18

2

1.3

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

48

74

Maximum Junction-to-Lead

Steady-State

RθJL

32

Max

62.5

90

40

D

S

Units

V

V

A

A

mJ

W

°C

Units

°C/W

°C/W

°C/W

1/6

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