AO4912L 查看數據表（PDF） - Unspecified

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AO4912L

Dual N-Channel Enhancement Mode Field Effect Transistor

Unspecified 

AO4912

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Units

STATIC PARAMETERS

BVDSS Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

30

V

IDSS

Zero Gate Voltage Drain Current.

by Schottky leakage)

VR=30V

(Set VR=30V, TJ=125°C

VR=30V, TJ=150°C

0.007 0.05

3.2 10 mA

12 20

IGSS

Gate-Body leakage current

VDS=0V, VGS= ±20V

100 nA

VGS(th) Gate Threshold Voltage

VDS=VGS ID=250µA

1 1.8 3 V

ID(ON)

On state drain current

VGS=4.5V, VDS=5V

30

A

RDS(ON) Static Drain-Source On-Resistance

VGS=10V, ID=8.5A

TJ=125°C

13.8 17

mΩ

20 24

VGS=4.5V, ID=7A

19.7 25 mΩ

gFS

Forward Transconductance

VDS=5V, ID=8.5A

23

S

VSD

Diode+Schottky Forward Voltage

IS=1A

0.45 0.5 V

IS

Maximum Body-Diode+Schottky Continuous Current

3.5 A

DYNAMIC PARAMETERS

Ciss

Input Capacitance

Coss

Output Capacitance (FET + Schottky)

Crss

Reverse Transfer Capacitance

Rg

Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

971 1165 pF

190

pF

110

pF

0.7 0.85 Ω

SWITCHING PARAMETERS

Qg(10V) Total Gate Charge

Qg

Total Gate Charge

Qgs

Gate Source Charge

Qgd

Gate Drain Charge

tD(on)

Turn-On DelayTime

tr

Turn-On Rise Time

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

trr

Body Diode + Schottky Reverse Recovery Time

Qrr

Body Diode + Schottky Reverse Recovery Charge

VGS=10V, VDS=15V, ID=8.5A

VGS=10V, VDS=15V, RL=1.8Ω,

RGEN=3Ω

IF=8.5A, dI/dt=100A/µs

IF=8.5A, dI/dt=100A/µs

19.2 23 nC

9.36 11.2 nC

2.6

nC

4.2

nC

5.2 7.5 ns

4.4 6.5 ns

17.3 25 ns

3.3 5 ns

19.3 23 ns

9.4 11 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given

application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a

single pulse rating.

F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and

recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.

Rev 4 : Aug 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

6/8

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