AO8807 查看數據表（PDF） - Unspecified
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AO8807 Datasheet PDF : 5 Pages
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AO8807
Dual P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
VDS=-6V
3.5
ID=-6.5A
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
-Qg (nC)
Figure 7: Gate-Charge Characteristics
2800
2400
Ciss
2000
1600
1200
800
Coss
400
Crss
0
0
2
4
6
8
10
12
-VDS (Volts)
Figure 8: Capacitance Characteristics
100
10 RDS(ON)
limited
10µs
100µs
1ms
1
10s
0.1s
0
TJ(Max)=150°C
TA=25°C
1s
DC
0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
80
TJ(Max)=150°C
60
TA=25°C
40
20
0
0.0001 0.001 0.01 0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
0.00001
Single Pulse
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
1000
4/5
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