AON7426 查看數據表（PDF） - Unspecified

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AON7426

30V P-Channel MOSFET

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AON7426

30V P-Channel MOSFET

General Description

The AON7426 combines advanced trench MOSFET technology with a low resistance package to provide

extremely low RDS(ON) . This device is ideal for load switch and battery protection applications.

Features

VDS

ID (at VGS=10V)

RDS(ON) (at VGS=10V)

RDS(ON) (at VGS =4.5V)

30V

40A

< 5.5mΩ

< 8mΩ

Top View

1

8

2

7

G

3

6

4

5

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain

Current G

TC=25°C

TC=100°C

ID

Pulsed Drain Current C

IDM

Continuous Drain

TA=25°C

Current

TA=70°C

Avalanche Current C

Avalanche energy L=0.1mH C

IDSM

IAS, IAR

EAS, EAR

TC=25°C

Power Dissipation B TC=100°C

PD

TA=25°C

Power Dissipation A TA=70°C

PDSM

Junction and Storage Temperature Range

TJ, TSTG

Maximum

30

±20

40

31

130

18

14

35

61

29

12

3.1

2

-55 to 150

Thermal Characteristics

Parameter

Symbol

Typ

Maximum Junction-to-Ambient A t ≤ 10s

Maximum Junction-to-Ambient A D Steady-State

RθJA

30

60

Maximum Junction-to-Case

Steady-State

RθJC

3.5

Max

40

75

4.2

D

S

Units

V

V

A

A

A

mJ

W

W

°C

Units

°C/W

°C/W

°C/W

1/6

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