AOT11S60 查看數據表（PDF） - Unspecified
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AOT11S60 Datasheet PDF : 6 Pages
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AOT11S60/AOB11S60/AOTF11S60
600V 11A α MOS TM Power Transistor
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=150°C
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=3.8A, TJ=25°C
VGS=10V, ID=3.8A, TJ=150°C
VSD
Diode Forward Voltage
IS=5.5A,VGS=0V, TJ=25°C
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed CurrentC
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=100V, f=1MHz
600
-
-
650 700
-
V
-
-
1
µA
-
10
-
-
- ±100 nΑ
2.8 3.5 4.1
V
-
0.35 0.399 Ω
-
0.98 1.11 Ω
-
0.84
-
V
-
-
11
A
-
-
45
A
-
545
-
pF
-
37.3
-
pF
Co(er)
Co(tr)
Effective output capacitance, energy
related H
Effective output capacitance, time
related I
VGS=0V, VDS=0 to 480V, f=1MHz
Crss
Reverse Transfer Capacitance
VGS=0V, VDS=100V, f=1MHz
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=480V, ID=5.5A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=5.5A,
RG=25Ω
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=5.5A,dI/dt=100A/µs,VDS=400V
Irm
Peak Reverse Recovery Current
IF=5.5A,dI/dt=100A/µs,VDS=400V
Qrr
Body Diode Reverse Recovery Charge IF=5.5A,dI/dt=100A/µs,VDS=400V
-
30.8
-
pF
-
93.6
-
pF
-
1.42
-
pF
-
16.5
-
Ω
-
11
-
nC
-
2.8
-
nC
-
3.8
-
nC
-
20
-
ns
-
20
-
ns
-
59
-
ns
-
20
-
ns
-
250
-
ns
-
21
-
A
-
3.3
-
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=2A, VDD=150V, Starting TJ=25°C
H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.
J. Wavesoldering only allowed at leads.
2/6
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