AP2126K-3.3TRG1 查看數據表（PDF） - BCD Semiconductor

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AP2126K-3.3TRG1

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR

Electrical Characteristics (Continued)

(AP2126-3.3V, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TJ≤85oC, unless otherwise specified.)

AP2126

Parameter

Output Voltage

Input Voltage

Maximum Output Current

Load Regulation

Line Regulation

Dropout Voltage

Quiescent Current

Standby Current

Power Supply

Rejection Ratio

Output Voltage

Temperature Coefficient

Output Current Limit

Short Current Limit

Soft Start Time

RMS Output Noise

Shutdown "High" Voltage

Symbol

VOUT

VIN

IOUT(MAX)

∆VOUT

/(∆IOUT*VOUT)

∆VOUT

/(∆VIN*VOUT)

VDROP

IQ

ISTD

PSRR

(∆VOUT/VOUT)

/∆T

Conditions

VIN=VOUT+1V

1mA≤IOUT≤300mA

VIN-VOUT=1V,

1mA≤IOUT≤300mA

VOUT+0.5V≤VIN≤6V

IOUT=30mA

VOUT=3.3V, IOUT=300mA

VIN=VOUT+1V, IOUT=0mA

VIN=VOUT+1V,

VSHUTDOWN in off mode

Ripple 1Vp-p

VIN=VOUT+1V

f=100Hz

f=1KHz

f=10KHz

IOUT=30mA, -40oC≤TJ≤85oC

ILIMIT

ISHORT

tUP

VNOISE

VIN-VOUT=1V,

VOUT=0.98*VOUT

VOUT=0V

TA=25oC, 10Hz ≤f≤100kHz

Shutdown input voltage "High"

Min

98%*

VOUT

1.5

Typ

450

170

60

0.1

65

65

45

±100

400

50

50

60

Max Unit

102%*

VOUT

V

6

V

mA

0.6 %/A

0.06 %/V

300 mV

90

µA

1.0 µA

dB

dB

dB

ppm/oC

mA

mA

µs

µVrms

6

V

Shutdown "Low" Voltage

VOUT Discharge MOSFET

RDS(ON)

Shutdown Pull Down Resis-

tance

Thermal Shutdown

Thermal Shutdown Hysteresis

Shutdown input voltage "Low" 0

Shutdown input voltage "Low"

0.4

V

60

Ω

3

MΩ

165

oC

30

oC

Jun. 2008 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

5

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