AP2210K-2.5TRE1 查看數據表（PDF） - BCD Semiconductor

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AP2210K-2.5TRE1

300mA RF ULDO REGULATOR

BCD Semiconductor 

Data Sheet

300mA RF ULDO REGULATOR

AP2210

Electrical Characteristics (Continued)

AP2210-2.8 Electrical Characteristics

VIN=3.8V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),

unless otherwise specified.

Parameter

Symbol

Conditions

Min Typ Max Unit

Enable Input Logic-low Voltage

VIL

Regulator shutdown

0.4

V

0.18

Enable Input Logic-high Voltage

Enable Input Logic-low Current

Enable Input Logic-high Current

VIH

Regulator enabled

IIL

VIL≤0.4V

VIL≤0.18V

IIH

VIL≥2.0V

VIL≥2.0V

2.0

V

0.01

1

µA

2

5

20

µA

25

Note 2: Specifications in bold type are limited to -40oC≤TJ≤125oC. Limits over temperature are guaranteed by design, but not

tested in production.

Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature

range.

Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load

regulation in the load range from 0.1mA to 300mA. Changes in output voltage due to heating effects are covered by the thermal

regulation specification.

Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25oC) or 2% (-

40oC≤TJ≤125oC) below its nominal value measured at 1V differential.

Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the

supply is the sum of the load current plus the ground pin current.

Jul. 2011 Rev. 1. 5

BCD Semiconductor Manufacturing Limited

8

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