AP2213M-2.5G1 查看數據表（PDF） - BCD Semiconductor

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AP2213M-2.5G1

500mA LOW NOISE LDO REGULATOR

BCD Semiconductor 

Data Sheet

500mA LOW NOISE LDO REGULATOR

AP2213

Electrical Characteristics (Continued)

AP2213-3.0 Electrical Characteristics

VIN=4V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25oC, Bold typeface applies over -40oC≤TJ≤125oC (Note 2),

unless otherwise specified.

Parameter

Output Voltage Accuracy

Output Voltage

Temperature Coefficient

(Note 3)

Line Regulation

Symbol

∆VOUT/VOUT

∆VOUT/∆T

(∆VOUT/VOUT)/∆T

Conditions

Variation from specified

VOUT

VRLINE

VIN=4V to 13.2V

Load Regulation

(Note 4)

VRLOAD

IOUT=0.1mA to 500mA

IOUT=100µA

IOUT=50mA

Dropout Voltage (Note 5)

VDROP

IOUT=100mA

IOUT=150mA

IOUT=300mA

Standby Current

IOUT=500mA

ISTD

VEN≤0.4V (shutdown)

VEN≤0.18V (shutdown)

VEN≥2.0V, IOUT=100µA

Ground Pin Current

(Note 6)

IGND

VEN≥2.0V, IOUT=50mA

VEN≥2.0V, IOUT=150mA

VEN≥2.0V, IOUT=300mA

VEN≥2.0V, IOUT=500mA

Min Typ Max Unit

-1

1

%

-2

2

120

µV/oC

40

ppm/oC

1.5 4.5

12

mV

1

8

17

mV

15 50

70

110 150

230

140 250

300

mV

165 275

350

250 400

500

350 600

700

0.01 1

µA

5

100 150

180

µA

350 600

800

1.3 1.9

2.5

4

10

mA

15

11 20

28

Nov. 2009 Rev. 1. 5

BCD Semiconductor Manufacturing Limited

8

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