DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

AP3607FNTR-G1 查看數據表(PDF) - BCD Semiconductor

零件编号
产品描述 (功能)
生产厂家
AP3607FNTR-G1 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Preliminary Datasheet
4/6 CHANNEL CHARGE PUMP CURRENT SINK FOR LED DRIVER
AP3606/AP3607
Electrical Characteristics (Continued)
VIN=3.6V, VEN=VIN, TA=25ºC, CIN=C1=C2=COUT=1µF, VF(forward voltage)=3.2V, unless otherwise noted.
Parameter
Symbol
Current Matching Between any
Two Outputs
ID-Match1
AP3606
AP3607
Current Matching Between any
Two Outputs
ID-Match2
AP3606
AP3607
Enable Section
Conditions
VD1=VD2=VD3=VD4=
3.2V
VD1=VD2=VD3=VD4=
VD5=VD6=3.2V
VD1=VD2=VD3=VD4=3.0
V to 4.0V
VIN=3.2V to 5.0V
VD1=VD2=VD3=VD4=
VD5=VD6=3.0V to 4.0V
VIN=3.2V to 5.0V
Min
-3
-3.5
Typ
Max Unit
3
%
3.5 %
EN High Level Threshold Voltage
VIH
1.5
V
EN Low Level Threshold Voltage
EN Input Current
EN Low to Shutdown Delay
EN Low Time for Dimming
EN High Time for Dimming
Total Device
Soft-start Time
Inrush Current
Over Voltage Protection
Thermal Shutdown
VIL
IEN
tSHDN
tLO
tHI
VEN= 0V to 5V
tSS
IINRUSH
VOVP
AP3606
AP3607
AP3606
AP3607
Note 2
ID=80mA Total
ID=120mA Total
VIN=3.2V,
ID=80mA Total
VIN=3.2V,
ID=120mA Total
TOTSD
0.5 V
1
10 µA
1
ms
0.45
500 µs
0.45
µs
200
µs
200
mA
320
5.5
V
160
ºC
Thermal Shutdown Hysteresis
Thermal Resistance
(Junction to Case)
THYS
θJC
QFN-3×3-16
20
ºC
15
ºC/W
Note 2: Open circuit at any WLED that is programmed to be in the on state.
Dec. 2008 Rev. 1. 2
BCD Semiconductor Manufacturing Limited
6

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]