1N5818 查看數據表（PDF） - Fairchild Semiconductor
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1N5818 Datasheet PDF : 4 Pages
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November 2010
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
• 1.0 ampere operation at TA = 90°C with no thermal runaway.
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
DO-41 plastic case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
1N5817 1N5818 1N5819
VRRM Maximum Repetitive Reverse Voltage
20
30
40
V
IF(AV)
Average Rectified Forward Current
1.0
A
.375” lead length @ TA = 90°C
IFSM
Non-repetitive Peak Surge Current
25
A
8.3 ms Single Half-Sine Wave
TJ, TSTG Operating Junction and Storage Temperature
-65 to +125
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
Parameter
PD
Power Dissipation
RθJA
Maximum Thermal Resistance, Junction to Ambient
RθJC
Maximum Thermal Resistance, Junction to Case
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics (per diode)
Symbol
Parameter
VF
Forward Voltage
IR
Reverse Current @ rated VR
CT
Total Capacitance
VR = 4.0 V, f = 1.0 MHz
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
@ 1.0 A
@ 3.0 A
TC = 25 °C
TC = 100 °C
Value
1.25
100
45
Units
W
°C/W
°C/W
1N5817
450
750
Value
1N5818
550
875
0.5
10
110
1N5819
600
900
Units
mV
mV
mA
mA
pF
© 2010 Fairchild Semiconductor Corporation
1N5817 - 1N5819 Rev. C2
1
www.fairchildsemi.com
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