AP4405GM 查看數據表（PDF） - Advanced Power Electronics Corp

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AP4405GM

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp 

AP4405GM

14

I D = -13A

12 V DS = -24V

10

8

6

4

2

0

0

20

40

60

80

100

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

100

10

100us

1ms

1

10ms

100ms

0.1

1s

T A =25 o C

Single Pulse

0.01

0.01

0.1

1

DC

10

100

-V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

f=1.0MHz

4000

C iss

3000

2000

1000

C oss

C rss

0

1

5

9

13

17

21

25

29

-V DS , Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

1

Duty factor=0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.01

Single Pulse

PDM

t

T

Duty factor = t/T

Peak Tj = PDM x Rthja + Ta

Rthja=125oC/W

0.001

0.0001

0.001

0.01

0.1

1

10

t , Pulse Width (s)

100

1000

Fig 10. Effective Transient Thermal Impedance

VDS

90%

10%

VGS

td(on) tr

td(off) tf

VG

-4.5V

QGS

QG

QGD

Charge

Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

4

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