4957AGM 查看數據表（PDF） - Advanced Power Electronics Corp
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4957AGM Datasheet PDF : 5 Pages
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40
T A = 25 o C
-10V
-7.0V
-5.0V
30
-4.5V
20
V G =-3.0V
10
0
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
36
ID=-5A
T A =25 ℃
32
28
24
20
2
4
6
8
10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10
8
6
T j =150 o C
T j =25 o C
4
2
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP4957AGM
40
T A = 150 o C
-10V
-7.0V
-5.0V
30
-4.5V
20
V G =-3.0V
10
0
0
1
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
ID=-7A
V G =-10V
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1.0
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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