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RMPA29200 查看數據表(PDF) - Raytheon Company

零件编号
产品描述 (功能)
生产厂家
RMPA29200
Raytheon
Raytheon Company Raytheon
RMPA29200 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
Description
Features
ADVANCED INFORMATION
The Raytheon RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage
GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
17 dB small signal gain (typ.)
33 dBm saturated power out (typ.)
DC Bias connections on top or bottom side
Circuit contains individual source vias
Chip size 4.00 mm x 2.98 mm
Absolute
Maximum
Ratings
Parameter
Positive DC Voltage (+5 V Typical)
Negative DC Voltage
Simultaneous (Vd - Vg)
Positive DC Current
RF Input Power (from 50 source)
Operating Base plate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
Symbol
Vd
Vg
Vdg
ID
PIN
TC
TStg
Rjc
Typical
+6
-2
+8
2450
+22
-30 to +85
-55 to +125
5.6
Units
Volts
Volts
Volts
mA
dBm
°C
°C
°C/W
Electrical
Characteristics
(at 25 °C) 50 Ohm
system, Vd=+5V,
Quiescent current
(Idq)=1500 mA
Parameter
Min
Frequency Range
29
Gate Supply Voltage (Vg)1
Gain Small Signal
14.5
(Pin=0 dBm)
Gain Variation vs. Frequency
Power Output
at 1 dB Compression
Power Output Saturated:
32
(Pin=+19 dBm)
Drain Current
at Pin=0 dBm
Typ Max Unit
31 GHz
-0.2
V
17
dB
+/-0.5
dB
32.5
dBm
33
dBm
1500
mA
Parameter
Drain Current
at P1 dB Compression
Power Added Efficiency
(PAE): at P1dB
OIP3 (26 dBm/Tone)
Input Return Loss
(Pin=0 dBm)
Output Return Loss
(Pin=0 dBm)
Min Typ Max Unit
1780
mA
20
%
38
dBm
12
dB
10
dB
www.raytheon.com/micro
Note:
1. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810

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