HYS64V2100GCU-10 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

HYS64V2100GCU-10

2M x 64/72 SDRAM-Module

Infineon Technologies 

HYS64(72)V2100G(C)U-10

2M x 64/72 SDRAM-Module

SPD-Table (contd’ )

Byte#

Description

28 Minimum Row Active to Row Active delay

tRRD

29 Minimum RAS to CAS delay tRCD

30 Minimum RAS pulse width tRAS

31 Module Bank Density (per bank)

32-61 Superset information (may be used in

future)

62 SPD Revision

63 Checksum for bytes 0 - 62

64- Manufacturess’ information (optional)

127 (FFh if not used)

128+ Unused storage locations

SPD Entry Value

Hex

20 ns

x64 x72

14 14

30 ns

45 ns

16 MByte

1E 1E

2D 2D

04 04

FF FF

Revision 1

01 01

F3 05

FF FF

FF FF

L-DIM-168-27

SDRAM DIMM Module package

133,35

127,35

3,0

1 10 11

40 41

84

42,18

66,68

A

B

AC

85 94 95

124 125

168

6,35

2,0

Detail A

6,35

2,0

Detail B

1,27

1,0 +- 0.5

Detail C

0,2 +- 0,15

DM168-27.WMF(EWK)

Semiconductor Group

11

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