HYS64V2100GCU-10 查看數據表（PDF） - Infineon Technologies

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HYS64V2100GCU-10

2M x 64/72 SDRAM-Module

Infineon Technologies 

3.3V 2M x 64-Bit SDRAM Module

3.3V 2M x 72-Bit SDRAM Module

168 pin unbuffered DIMM Modules

HYS64V2100G(C)U-10

HYS72V2100G(C)U-10

• 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual-In-Line SDRAM Module

for PC main memory applications

• 1 bank 2M x 64, 2M x 72 organisation

• Optimized for byte-write non-parity or ECC applications

• Fully PC66 layout compatible

• JEDEC standard Synchronous DRAMs (SDRAM)

• Performance:

fCK

Max. Clock frequency

tAC

Max. access time from clock

-10

66 MHz @ CL=2

100 MHz @ CL=3

9 ns @ CL=2

8 ns @ CL=3

• Single +3.3V(± 0.3V ) power supply

• Programmable CAS Latency, Burst Length and Wrap Sequence

(Sequential & Interleave)

• Auto Refresh (CBR) and Self Refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs are LVTTL compatible

• Serial Presence Detect with E2PROM

• Utilizes eight / nine 2M x 8 SDRAMs in TSOPII-44 packages

• 4096 refresh cycles every 64 ms

• Gold contact pad

• Card Size: 133,35mm x 29,21mm x 3,00mm for HYS64/72V2100GU

• HYS64/72V2100GCU in chip-on-board technique

• Card Size : 133,35mm x 25,40mm x 3,00mm for HYS64/72V2100GCU

•

Semiconductor Group

1

12.97

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