APM9953KC-TRL 查看數據表（PDF） - Anpec Electronics

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APM9953KC-TRL

Dual P-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM9953K

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

VDSS

VGSS

ID*

IDM*

IS*

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

300µs Pulsed Drain Current

Diode Continuous Forward Current

VGS=-10V

TJ

TSTG

Maximum Junction Temperature

Storage Temperature Range

PD*

Maximum Power Dissipation

RθJA* Thermal Resistance-Junction to Ambient

Note:

*Surface Mounted on 1in2 pad area, t ≤ 10sec.

TA=25°C

TA=100°C

Rating

-20

±10

-3

-12

-1

150

-55 to 150

2

0.8

62.5

Unit

V

A

A

°C

W

°C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

APM9953

Unit

Min. Typ. Max.

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA

-20

V

IDSS Zero Gate Voltage Drain Current VDS=-16V, VGS=0V

TJ=85°C

-1

µA

-30

VGS(th) Gate Threshold Voltage

VDS=VGS, IDS=-250µA

-0.5 -0.7 -1

V

IGSS Gate Leakage Current

VGS=±10V, VDS=0V

±100 nA

RDS(ON) a

VSDa

Drain-Source On-state Resistance

Diode Forward Voltage

VGS=-10V, IDS=-3A

VGS=-4.5V, IDS=-2A

ISD=-0.5A, VGS=0V

76 100

mΩ

93 125

-0.7 -1.3 V

Gate Charge Characteristics b

Qg Total Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=-10V, VGS=-4.5V,

IDS=-3A

5.3 7

1.1

nC

0.7

Copyright  ANPEC Electronics Corp.

2

Rev. B.1 - Mar., 2005

www.anpec.com.tw

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