APM4430K(2001) 查看數據表（PDF） - Anpec Electronics

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APM4430K
(Rev.:2001)

N-Channel Enhancement Mode MOSFET

Anpec Electronics 

APM4430

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol

Parameter

PD

Maximum Power Dissipation*

TA = 25°C

TA = 70°C

TJ

Maximum Junction Temperature

TSTG Storage Temperature Range

RthJA Thermal Resistance – Junction to Ambient

* Surface Mounted on FR4 Board, t ≤ 10 sec.

Rating

1.6

0.625

150

-55 to 150

80

Electrical Characteristics (TA=25°C unless otherwise noted)

Unit

W

°C

°C/W

Symbol

Parameter

Test Condition

APM4430

Unit

Min. Typ. Max.

Static

BVDSS Drain-Source Breakdown

VGS=0V, ID=250µA

30

IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V

VDS =24V, VGS =0V, T j = 55°C

VGS(th) Gate Threshold Voltage

VDS=VGS, ID=250µA

1

IGSS Gate Leakage Current

VGS=±20V, VDS=0V

Drain-Source On-state

RDS(ON) Resistance

VGS=10V, ID=23A

VGS=5V, ID=17A

VSD Diode Forward Voltage

IS=6A, VGS=0V

0.6

V

1 µA

5 µA

3V

±100 nA

4.5 5

mΩ

78

1.1 V

Dynamic

Qg

Qgs

Qgd

td(ON)

tr

td(OFF)

tf

Ciss

Coss

Crss

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS=15V, VGS=4.5V,

ID=23A

VDD=15V, ID=1A,

VGEN=10V, RG=0.2Ω

VGS=0V

VDS=15V

Frequency=1.0MHz

40 55 nC

17

nC

14

nC

30 45 ns

16 24 ns

100 150 ns

55 70 ns

4800

pF

900

pF

320

pF

Copyright  ANPEC Electronics Corp.

2

Rev. A.1 - Oct., 2001

www.anpec.com.tw

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