APM3023NUC-TUL 查看數據表（PDF） - Anpec Electronics
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APM3023NUC-TUL Datasheet PDF : 10 Pages
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APM3023NU
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
APM3023NU
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=250µA
30
VDS=24V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250µA
1
VGS=±20V, VDS=0V
VGS=10V, IDS=20A
VGS=4.5V, IDS=10A
Diode Characteristics
VSDa Diode Forward Voltage
Dynamic Characteristicsb
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
Tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
Tf Turn-off Fall Time
ISD=15A, VGS=0V
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=25V,
Frequency=1.0MHz
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
Qrr
Body Diode Reverse Recovery Charge
IF=20A, dI/dt=100A/µs
Trr Body Diode Reverse Recovery Time
Gate Charge Characteristicsb
Qg
Qgs
Qgd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=20A
a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
V
1
µA
30
1.5
2
V
±100 nA
15 20
mΩ
22 28
0.7 1.3 V
2.5
Ω
1040
200
pF
85
11 18
17 26
37 54
ns
20 30
12.1
22
30 40
5.8
nC
3.8
Copyright © ANPEC Electronics Corp.
3
Rev. B.2 - Oct., 2005
www.anpec.com.tw
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