AS6C2008I 查看數據表（PDF） - Alliance Semiconductor

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AS6C2008I

256K X 8 BIT LOW POWER CMOS SRAM

Alliance Semiconductor 

February 2007

Rev. 1.1

AS6C2008

®

256K X 8 BIT LOW POWER CMOS SRAM

FEATURES

Access time : 55ns

Low power consumption:

Operating current :20mA (TYP.)

Standby current :

1µ A (TYP.) LL-version

Single 2.7V ~ 3.6V power supply

Fully static operation

Tri-state output

Data retention voltage : 1.5V (MIN.)

All Products ROHS Compliant

Package : 32-pin 450 mil SOP

32-pin 8mm x 20mm TSOP-I

32-pin 8mm x 13.4mm sTSOP

36-ball 6mm x 8mm TFBGA

PRODUCT FAMILY

Product

Family

Operating

Temperature

Vcc Range

GENERAL DESCRIPTION

The AS6C2008 is a 2,097,152-bit low power CMOS

static random access memory organized as 262,144

words by 8 bits. It is fabricated using very high

performance, high reliability CMOS technology. Its

standby current is stable within the range of

operating temperature.

The AS6C2008 is well designed for very low power

system applications, and particularly well suited for

battery back-up nonvolatile memory application.

The AS6C2008 operates from a single power

supply of 2.7V ~ 3.6V

.

Speed

Power Dissipation

Standby(ISB1,TYP.) Operating(Icc,TYP.)

AS6C2008 (I)

-40 ~ 85ºC

2.7 ~ 3.6V

FUNCTIONAL BLOCK DIAGRAM

Vcc

Vss

A0-A17

DECODER

256Kx8

MEMORY ARRAY

DQ0-DQ7

I/O DATA

CIRCUIT

CE#

CE2

WE#

OE#

CONTROL

CIRCUIT

COLUMN I/O

55ns

20µA(L)/1µA(LL)

20mA

PIN DESCRIPTION

SYMBOL

A0 - A17

DQ0 – DQ7

CE#, CE2

WE#

OE#

VCC

VSS

NC

DESCRIPTION

Address Inputs

Data Inputs/Outputs

Chip Enable Inputs

Write Enable Input

Output Enable Input

Power Supply

Ground

No Connection

10/February/07, v.1.0

Alliance Memory Inc.

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