AS6C2008 查看數據表（PDF） - Alliance Semiconductor
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AS6C2008 Datasheet PDF : 13 Pages
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February 2007
Rev. 1.1
AS6C2008
®
256K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to VSS
SYMBOL
VTERM
RATING
-0.5 to 4.6
UNIT
V
Operating Temperature
TA
ºC
-40 to 85(I grade)
Storage Temperature
TSTG
-65 to 150
ºC
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
Soldering Temperature (under 10 sec)
TSOLDER
260
ºC
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
Standby
H
X
Output Disable
L
Read
L
Write
L
Note: H = VIH, L = VIL, X = Don't care.
CE2
X
L
H
H
H
OE#
X
X
H
L
X
WE#
X
X
H
H
L
I/O OPERATION
High-Z
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITION
Supply Voltage
Input High Voltage
Input Low Voltage
VCC
VIH*1
VIL*2
Input Leakage Current
ILI VCC ≧ VIN ≧ VSS
Output Leakage
Current
ILO
VCC ≧ VOUT ≧ VSS,
Output Disabled
Output High Voltage
VOH IOH = -1mA
Output Low Voltage
VOL IOL = 2mA
Cycle time = Min.
ICC CE# = VIL and CE2 = VIH, - 55
Average Operating
Power supply Current
II/O = 0mA
Cycle time = 1µs
ICC1
CE#≦0.2V and CE2≧VCC-0.2V,
II/O = 0mA
other pins at 0.2V or VCC-0.2V
ISB CE# = VIH or CE2 = VIL
Standby Power
Supply Current
ISB1
CE# ≧VCC-0.2V
or CE2≦0.2V
-
-
-I*
*I= Industrial temperature
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
-
-
-
TYP. *4
3.0
-
-
-
-
2.7
-
MAX.
3.6
VCC+0.3
0.6
1
1
-
0.4
UNIT
V
V
V
µA
µA
V
V
20
35
mA
4
5
mA
0.3
0.5
mA
1
20*5
µA
10/February/07, v.1.0
Alliance Memory Inc.
Page 3 of 13
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