AS8ER128K32 查看數據表（PDF） - Austin Semiconductor

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AS8ER128K32

128K x 32 Radiation Tolerant EEPROM

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS8ER128K32

CAPACITANCE TABLE1 (VIN = 0V, f = 1 MHz, TA = 25oC)

SYMBOL

CADD

COE

CWE, CCE

CIO

PARAMETER

A0 - A16 Capacitance

OE\, RES\, RDY Capacitance

WE\ and CE\ Capacitance

I/O 0- I/O 31 Capacitance

MAX

40

40

12

20

NOTE: 1. This parameter is guaranteed but not tested.

UNITS

pF

pF

pF

pF

AC TEST CHARACTERISTICS

TEST SPECIFICATIONS

Input pulse levels...........................................VSS to 3V

Input rise and fall times...........................................5ns

Input timing reference levels.................................1.5V

Output reference levels.........................................1.5V

Output load................................................See Figure 1

NOTES:

Vz is programmable from -2V to + 7V.

I and I programmable from 0 to 16 mA.

OL

OH

Vz is typically the midpoint of VOH and VOL.

IOL and IOH are adjusted to simulate a typical resistive load

circuit.

Current Source

Device

-

Under

Test

+

Ceff = 50pf

Current Source

IOL

+

IOH

Figure 1

Vz = 1.5V

(Bipolar

Supply)

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS

(-55oC < TA < +125oC or -40oC to +85oC; Vcc = 5V +10%)

DESCRIPTION

Address to Output Delay

CE\ to Output Delay

OE\ to Output Delay

TEST CONDITIONS

CE\ = OE\ = VIL, WE\ = VIH

OE\ = VIL, WE\ = VIH

OE\ = VIL, WE\ = VIH

SYMBOL

tACC

tCE

tOE

150

MIN MAX

150

150

10

75

UNITS

ns

ns

ns

Address to Output Hold

CE\ = OE\ = VIL, WE\ = VIH

tOH

0

ns

CE\ or OE\ high to Output Float (1) OE\ = VIL, WE\ = VIH

tDF

0

50

ns

RES\ low to Output Float (1)

CE\ = OE\ = VIL, WE\ = VIH

tDFR

0

350

ns

RES\ to Output Delay

CE\ = OE\ = VIL, WE\ = VIH

tRR

0

450

ns

AS8ER128K32

Rev. 5.3 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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