AS8ER128K32 查看數據表（PDF） - Austin Semiconductor
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AS8ER128K32 Datasheet PDF : 18 Pages
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Austin Semiconductor, Inc.
EEPROM
AS8ER128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55oC < TA < +125oC; Vcc = 5V +10%)
SYMBOL
PARAMETER
MIN(2)
MAX
UNITS
tAS Address Setup Time
0
ms
tAH Address Hold Time
150
ns
tCS CE\ to Write Setup Time (WE\ controlled)
0
ns
tCH CE\ Hold Time (WE\ controlled)
0
ns
tWS WE\ to Write Setup Time (CE\ controlled)
0
ns
tWH WE\ to Hold Time (CE\ controlled)
0
ns
tOES OE\ to Write Setup Time
0
ns
tOEH OE\ to Hold Time
0
ns
tDS Data Setup Time
100
ns
tDH Data Hold Time
10
ns
tWP WE\ Pulse Width (WE\ controlled)
250
ns
tCW CE\ Pulse Width (CE\ controlled)
250
ns
tDL Data Latch Time
300
ns
tBLC Byte Load Cycle
0.55
30
µs
tBL Byte Load Window
tWC Write Cycle Time
100
µs
10 (3)
ms
tDB Time to Device Busy
tDW Write Start Time
120
ns
150 (4)
ns
tRP
tRES
Reset Protect Time
Reset High Time (5)
100
µs
1
µs
ADDRESS
CE\
OE\
WE\
Data Out
RES\
AS8ER128K32
Rev. 5.3 6/05
READ TIMING WAVEFORM
VIH
HIGH-Z
tACC
tCE
tOE
tOH
tDF
DATA OUT VALID
tRR
tDFR
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
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