NDM3000 查看數據表（PDF） - Fairchild Semiconductor

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NDM3000

3 Phase Brushless Motor Driver

Fairchild Semiconductor 

THERMAL CHARACTERISTICS

RθJA

Thermal Resistance, Junction-to-Ambient

Q1+Q4 or Q1+Q6 or Q3+Q2 or

Q3+Q6 or Q5+Q2 or Q5+Q4

(Note 1a)

RθJC

Thermal Resistance, Junction-to-Case

Q1+Q4 or Q1+Q6 or Q3+Q2 or

Q3+Q6 or Q5+Q2 or Q5+Q4

(Note 1)

Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS

IDSS

Drain-Source Breakdown Voltage VGS = 0 V, ID = ± 250 µA

Zero Gate Voltage Drain Current VDS = ±20 V, VGS = 0 V

IGSS

Gate - Body Leakage, Forward

ON CHARACTERISTICS (Note 3)

VGS(th)

Gate Threshold Voltage

VGS = ±20 V, VDS = 0 V

VDS = VGS, ID = -250 µA

VDS = VGS, ID = 250 µA

RDS(ON)

Static Drain-Source

On-Resistance

VGS = -10 V, ID = -3.0 A

VGS = -4.5 V, ID = -1.0 A

VGS = 10 V, ID = 3.0 A

ID(on)

On-State Drain Current

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VGS = 4.5 V, ID = 1.0 A

VGS = -10 V, VDS = -5 V

VGS = 10 V, VDS = 5 V

Q1, Q3, Q5

VDS = -10 V, VGS = 0 V,

f = 1.0 MHz

Q2, Q4, Q6

VDS = 10 V, VGS = 0 V,

f = 1.0 MHz

50

°C/W

20

°C/W

Type

Min Typ Max Units

TJ=55oC

All

±30

All

All

V

±1 µA

±25 µA

±100 nA

Q1, Q3, Q5 -1 -1.6 -3

V

TJ=125oC

Q2, Q4, Q6

-0.7 -1.25 -2.2

1

1.7

3

TJ=125oC

0.7 1.2 2.2

Q1, Q3, Q5

0.125 0.16 Ω

TJ=125oC

0.18 0.29

0.16 0.25

Q2, Q4, Q6

0.07 0.09

TJ=125oC

0.1 0.16

0.09 0.13

Q1, Q3, Q5 -10

A

Q2, Q4, Q6 10

Q1, Q3, Q5

375

pF

Q2, Q4, Q6

360

Q1, Q3, Q5

245

pF

Q2, Q4, Q6

260

Q1, Q3, Q5

130

pF

Q2, Q4, Q6

105

NDM3000 Rev. E

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