28F016C3 查看數據表（PDF） - Intel
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28F016C3 Datasheet PDF : 59 Pages
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3 VOLT ADVANCED+ BOOT BLOCK
E
Any attempt to address Protection Program
commands outside the defined protection register
address space will result in a Status Register error
(Program Error bit SR.4 will be set to 1). Attempting
to program or to a previously locked protection
register segment will result in a status register error
(program error bit SR.4 and lock error bit SR.1 will
be set to 1).
3.4.3
LOCKING THE PROTECTION
REGISTER
The user-programmable segment of the protection
register is lockable by programming Bit 1 of the
PR-LOCK location to 0. Bit 0 of this location is
programmed to 0 at the Intel factory to protect the
unique device number. This bit is set using the
Protection Program command to program “FFFD” to
the PR-LOCK location. After these bits have been
programmed, no further changes can be made to
the values stored in the protection register.
Protection Program commands to a locked section
will result in a status register error (Program Error
bit SR.4 and Lock Error bit SR.1 will be set to 1).
Protection register lockout state is not reversible.
88H
4 Words
User Programmed
85H
84H
4 Words
Factory Programmed
81H
80H 1 Word Lock
0645_05
Figure 5. Protection Register Memory Map
3.5 VPP Program and Erase
Voltages
Intel’s 3 Volt Advanced+ Boot Block products
provide in-system writes plus a VPP pin for 12 V
production programming and complete write
protection.
3.5.1
EASY-12 V OPERATION FOR FAST
MANUFACTURING PROGRAMMING
Intel’s 3 Volt Advanced+ Boot Block products
provide in-system programming and erase in the
2.7 V–3.6 V range. For fast production
programming, 3 Volt Advanced+ Boot Block
includes a low-cost, backward-compatible 12 V
programming feature.
When VPP is between 1.65 V and 3.6 V, all program
and erase current is drawn through the VCC pin.
Note that if VPP is driven by a logic signal,
VIH = 1.65 V. That is, VPP must remain above 1.65 V
to perform in-system flash modifications. When VPP
is connected to a 12 V power supply, the device
draws program and erase current directly from the
VPP pin. This eliminates the need for an external
switching transistor to control the voltage VPP.
Figure 6 shows examples of how the flash power
supplies can be configured for various usage
models.
The 12 V VPP mode enhances programming
performance during the short period of time typically
found in manufacturing processes; however, it is
not intended for extended use. 12 V may be applied
to VPP during program and erase operations for a
maximum of 1000 cycles on the main blocks and
2500 cycles on the parameter blocks. VPP may be
connected to 12 V for a total of 80 hours maximum.
Stressing the device beyond these limits may cause
permanent damage.
3.5.2
VPP ≤ VPPLK FOR COMPLETE
PROTECTION
In addition to the flexible block locking, the VPP
programming voltage can be held low for absolute
hardware write protection of all blocks in the flash
device. When VPP is below VPPLK, any program or
erase operation will result in a error, prompting the
corresponding status register bit (SR.3) to be set.
3.5.3
VPP USAGE
The VPP pin is used for two functions: Absolute data
protection and fast production programming.
When VPP ≤ VPPLK, then all program or erase
operations to the device are inhibited, providing
absolute data protection.
22
PRODUCT PREVIEW
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