AT49BV160C 查看數據表（PDF） - Atmel Corporation

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AT49BV160C

16-megabit (1M x 16) 3-volt Only Flash Memory

Atmel Corporation 

Features

• Single Voltage Read/Write Operation: 2.65V to 3.6V

• Access Time – 70 ns

• Sector Erase Architecture

– Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

• Fast Word Program Time – 12 µs

• Fast Sector Erase Time – 300 ms

• Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase

of a Different Sector

– Supports Reading Any Word by Suspending Programming of Any Other Word

• Low-power Operation

– 12 mA Active

– 13 µA Standby

• VPP Pin for Write Protection

• WP Pin for Sector Protection

• RESET Input for Device Initialization

• Flexible Sector Protection

• TSOP and CBGA Package Options

• Top or Bottom Boot Block Configuration Available

• 128-bit Protection Register

• Minimum 100,000 Erase Cycles

• Common Flash Interface (CFI)

Description

The AT49BV160C(T) is a 2.7-volt 16-megabit Flash memory organized as 1,048,576

words of 16 bits each. The memory is divided into 39 sectors for erase operations.

The device is offered in a 48-lead TSOP and a 46-ball CBGA package. The device has

CE and OE control signals to avoid any bus contention. This device can be read or

reprogrammed using a single power supply, making it ideally suited for in-system

programming.

16-megabit

(1M x 16)

3-volt Only

Flash Memory

AT49BV160C

AT49BV160CT

Pin Configurations

Pin Name

A0 - A19

CE

OE

WE

RESET

VPP

I/O0 - I/O15

NC

VCCQ

WP

Function

Addresses

Chip Enable

Output Enable

Write Enable

Reset

Write Protection

Data Inputs/Outputs

No Connect

Output Power Supply

Write Protect

3367D–FLASH–5/04

1

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