AT93C46C-10SI-2.5 查看數據表（PDF） - Atmel Corporation
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AT93C46C-10SI-2.5 Datasheet PDF : 11 Pages
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AC Characteristics (Continued)
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol
Parameter
Test Condition
Min Typ Max
tDIS
DI Setup Time
Relative to SK 4.5V ≤ VCC ≤ 5.5V
100
2.7V ≤ VCC ≤ 5.5V
100
2.5V ≤ VCC ≤ 5.5V
200
tCSH
CS Hold Time
Relative to SK
0
tDIH
DI Hold Time
Relative to SK 4.5V ≤ VCC ≤ 5.5V
100
2.7V ≤ VCC ≤ 5.5V
100
2.5V ≤ VCC ≤ 5.5V
200
tPD1
Output Delay to ‘1’
AC Test
4.5V ≤ VCC ≤ 5.5V
250
2.7V ≤ VCC ≤ 5.5V
250
2.5V ≤ VCC ≤ 5.5V
500
tPD0
Output Delay to ‘0’
AC Test
4.5V ≤ VCC ≤ 5.5V
250
2.7V ≤ VCC ≤ 5.5V
250
2.5V ≤ VCC ≤ 5.5V
500
tSV
CS to Status Valid
AC Test
4.5V ≤ VCC ≤ 5.5V
250
2.7V ≤ VCC ≤ 5.5V
250
2.5V ≤ VCC ≤ 5.5V
500
tDF
CS to DO in High Impedance AC Test
4.5V ≤ VCC ≤ 5.5V
100
CS = VIL
2.7V ≤ VCC ≤ 5.5V
100
2.5V ≤ VCC ≤ 5.5V
200
tWP
Write Cycle Time
0.1
10
Endurance(1) 5.0V, 25°C, Page Mode
4.5V ≤ VCC ≤ 5.5V
1
1M
Note: 1. This parameter is characterized and is not 100% tested.
Units
ns
ns
ns
ns
ns
ns
ns
ms
ms
Write Cycle
Instruction Set for the AT93C46C
Instruction SB Op Code
READ
1
10
EWEN
1
00
ERASE
1
11
WRITE
1
01
ERAL
1
00
WRAL
1
00
EWDS
1
00
Address
x 16
A5 - A0
11XXXX
A5 - A0
A5 - A0
10XXXX
01XXXX
00XXXX
Comments
Reads data stored in memory, at specified address.
Write enable must precede all programming modes.
Erase memory location An - A0.
Writes memory location An - A0.
Erases all memory locations. Valid only at VCC = 4.5V to 5.5V.
Writes all memory locations. Valid only at VCC = 4.5V to 5.5V.
Disables all programming instructions.
4
AT93C46C
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