ATF-13100-GP3 查看數據表（PDF） - HP => Agilent Technologies
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ATF-13100-GP3 Datasheet PDF : 3 Pages
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Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VDS = 2.5 V,IDS␣ =␣ 20mA
Freq.
GHz
S11
Mag. Ang.
S21
dB
Mag. Ang.
S12
S22
dB
Mag. Ang. Mag. Ang.
2.0
.96 -27
13.4
4.68 153
-26.9 .045 75
.55 -16
3.0
.92 -41
13.4
4.65 140
-23.6 .066 67
.52 -24
4.0
.85 -58
13.1
4.54 126
-21.4 .085 59
.49 -33
5.0
.79 -76
12.9
4.40 113
-19.8 .102 50
.44 -41
6.0
.73 -95
12.4
4.19 100
-18.7 .116 42
.38 -48
7.0
.68 -113
12.0
3.97 87
-18.0 .126 34
.30 -54
8.0
.63 -132
11.4
3.71 75
-17.5 .134 25
.24 -64
9.0
.62 -151
10.9
3.51 63
-17.1 .140 18
.18 -75
10.0
.59 -167
10.3
3.27 53
-16.8 .144 11
.13 -84
11.0
.59 173
9.7
3.07 40
-16.5
.149
2
.08 -104
12.0
.57 155
9.0
2.83 30
-16.5 .150 -9
.02 160
13.0
.60 136
8.6
2.69 19
-16.4 .151 -16
.08 106
14.0
.64 116
7.9
2.47
7
-16.4 .151 -25
.15 103
15.0
.67
98
7.1
2.26 -6
-16.4 .152 -34
.23 100
16.0
.73
83
5.8
1.96 -16
-16.9 .143 -40
.31
90
17.0
.77
72
4.6
1.70 -26
-17.0 .141 -45
.36
82
18.0
.80
63
3.5
1.50 -35
-17.4 .135 -48
.40
72
A model for this device is available in the DEVICE MODELS section.
ATF-13100 Chip Dimensions
50 µm
1.97 mil
356 µm
14 mil
D
118 µm
4.65 mil
254 µm
10 mil
S
S
G
44 µm
1.73 mil
92 µm
3.62 mil
50 µm
1.97 mil
Note: Die thickness is 4.5 mil, and backside metallization is
200 Å Ti and 2000 Å Au.
5-35
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