ATF-13336 查看數據表（PDF） - HP => Agilent Technologies
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ATF-13336 Datasheet PDF : 3 Pages
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ATF-13336 Absolute Maximum Ratings
Symbol
VDS
VGS
VGD
IDS
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Drain Current
Power Dissipation [2,3]
Channel Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum[1]
+5
-4
-6
IDSS
225
175
-65 to +175
Thermal Resistance:
Liquid Crystal Measurement:
θjc = 400°C/W; TCH = 150°C
1␣ µm Spot Size[5]
Part Number Ordering Information
Part Number
Devices Per Reel
ATF-13336-TR1
1000
ATF-13336-STR
10
Reel Size
7"
strip
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 2.5mW/°C for
TCASE > 85°C.
4. Storage above +150°C may tarnish
the leads of this package difficult to
solder into a circuit. After a device
has been soldered into a circuit, it
may be safely stored up to 175°C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section for
more information.
ATF-13336 Noise Parameters: VDS = 2.5 V, IDS = 20 mA
Freq.
GHz
NFO
dB
Γopt
Mag
Ang
RN/50
4.0
0.8
.63
93
.27
6.0
1.1
.47
138
.10
8.0
1.2
.40
-153
.20
12.0
1.4
.52
-45
.88
14.0
1.6
.57
-2
1.3
ATF-13336 Typical Performance, TA = 25°C
16
14
14
12
GA
10
12
GA
10
2.0
8
2.5
8
1.5
NFO
6
2.0
1.0
NFO
1.5
0.5
0
6.0
8.0
10.0 12.0 14.0 16.0
FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and
Associated Gain vs. Frequency.
VDS = 2.5V, IDS = 20 mA, TA = 25°C.
1.0
0 10 20 30 40 50 60
IDS (mA)
Figure 2. Optimum Noise Figure and
Associated Gain vs. IDS.
VDS = 2.5V, f = 12.0 GHz.
25
20
MSG
15
MAG
10
|S21|2
5
0
2.0
4.0 6.0 8.0 10.0 12.0 16.0
FREQUENCY (GHz)
Figure 3. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VDS = 2.5 V, IDS = 20 mA.
5-37
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