AU5780 查看數據表（PDF） - Philips Electronics
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AU5780 Datasheet PDF : 10 Pages
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Philips Semiconductors
SAE/J1850/VPW transceiver
Product specification
AU5780
DYNAMIC CHARACTERISTICS
–40°C < Tamb < +125°C; 9V < VBATT< 16V; V/LB > 3V; 0V <VBUS < +8.5V;
RS = 56 kW; Rd= 10 kW; Rf= 15 kW; Rb= 10W; BUS_OUT: 300W < RL< 1.6 kW;
1.7 ms < (RL * CL) < 5.2 ms; 2.2 nF < CL < 16 nF; RX: CL < 40pF; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Pins TX, RX, /LB
tp
Delay TX to RX rising and falling edge
tpI
Delay TX to RX rising and falling edge in
/LB low
loop-back mode
tp_lobatt
tpI_lobatt
Delay TX to RX rising and falling edge
Delay TX to RX rising and falling edge in
loop-back mode
tdIb
Delay /LB to BUS_OUT
Pin BUS_OUT
6V < VBATT< 9V
/LB low,
6V < VBATT< 9V
TX high, toggle /LB
tbo
tbo_lobatt
Vsr
Delay TX to BUS_OUT
Delay TX to BUS_OUT
Bus output voltage slew rate
Isr
Bus output current slew rate
measured at 3.875V
measured at 3.875V,
6V < VBATT< 9V
6V < VBATT< 16V;
measured at 1.5V and min
[6.25V, VBATT–2.75V]
6V < VBATT< 16V;
RL= 100W; measured at 30% and
70% of waveform
VdB_limit
NR
NI
Pin Rs
Bus emissions voltage output
Bus noise rejection from battery
Bus noise isolation from battery
f > 500 kHz
30 Hz < f < 250kHz
250 kHz < f < 200 MHz
Ksr
Slew rate relationship factor, Note 3
Pin BUS_IN
CBIN
tDRXON;
TDRXOFF
TDRX_∆
Pin BATT
Bus Input capacitance
Bus line to RX propagation delay
Bus line to RX propagation delay mismatch
With 8V / 0V square wave input,
Rf = 15kΩ
tDRXOFF –tDRXON
tlow_power time-out to low power state
TX low
NOTES;
1. TX < 0.9V for more than 4 ms
2. For 6V < VBATT < 9V the bus output voltage is limited by the supply voltage.
For 16V < VBATT < 24V (jump start) the load is limited by the package power dissipation
ratings; the duration of this condition is recommended to be less than 90 seconds.
3. Vsr = (Ksr * Vsr.nom * Rs.nom) / Rs
with Vsr.nom = 0.3 V/µs; Rs.nom = 56 kΩ; 45 kΩ < Rs < 70 kΩ
MIN.
16
16
16
16
1
15
15
0.238
0.87
20
16
0.7
10
0.4
1
TYP.
1
MAX. UNIT
25 µs
25 µs
25 µs
25 µs
10 µs
24 µs
24 µs
0.365 V/µs
2.1 mA/µs
–60 dBV
dB
dB
1.3 –
20 pF
1.7 µs
1 µs
4 ms
1998 Jun 30
7
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