AU5790 查看數據表（PDF） - Philips Electronics

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AU5790

Single wire CAN transceiver

Philips Electronics 

Philips Semiconductors

Single wire CAN transceiver

Product data

AU5790

ABSOLUTE MAXIMUM RATINGS

According to the IEC 134 Absolute Maximum System: operation is not guaranteed under these conditions; all voltages are referenced to

pin 8 (GND); positive currents flow into the IC, unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX. UNIT

VBAT

VBATld

Supply voltage

Short-term supply voltage

Steady state

Load dump; ISO7637/1 test pulse 5

(SAE J1113, test pulse 5), T < 1s

–0.3

+27

V

+40

V

VBATtr2

Transient supply voltage

ISO 7637/1 test pulse 2 (SAE J1113,

test pulse 2), with series diode and

bypass cap of 100 nF between BAT and

GND pins, Note 2.

+100

V

VBATtr3

Transient supply voltage

ISO 7637/1 pulses 3a and 3b

(SAE J1113 test pulse 3a and 3b),

Note 2.

–150

+100

V

VCANH_1

VCANH_0

VCANHtr1

VCANHtr2

VCANHtr3

CANH voltage

CANH voltage

Transient bus voltage

Transient bus voltage

Transient bus voltage

VBAT > 2 V

–10

+18

V

VBAT < 2 V

–16

+18

V

ISO 7637/1 test pulse 1, Notes 1 and 2

–100

V

ISO 7637/1 test pulse 2, Notes 1 and 2

+100

V

ISO 7637/1 test pulses 3a, 3b,

Notes 1 and 2

–150

+100

V

VRTH1

Pin RTH voltage

VBAT > 2 V, voltage applied to pin RTH

–10

via a 2 kΩ series resistor

+18

V

VRTH0

Pin RTH voltage

VBAT < 2 V, voltage applied to pin RTH

–16

via a 2 kΩ series resistor

+18

V

VI

ESDBAHB

DC voltage on pins TxD, EN, RxD, NSTB

ESD capability of pin BAT

Direct contact discharge,

R=1.5 kΩ, C=100 pF

–0.3

+7

V

–8

+8

kV

ESDCHHB ESD capability of pin CANH

Direct contact discharge,

R=1.5 kΩ, C=100 pF

–8

+8

kV

ESDRTHB

ESD capability of pin RTH

Direct contact discharge,

R=1.5 kΩ + 3 kΩ, C=100 pF

–8

+8

kV

ESDLGHB

ESD capability of pins TxD, NSTB, EN, RxD, and Direct contact discharge,

RTH

R=1.5 kΩ , C=100 pF

–2

+2

kV

RTmin

Bus load resistance RT being connected to pin

RTH

2

kΩ

Tamb

Tstg

Tvj

Operating ambient temperature

Storage temperature

Junction temperature

–40

+125

°C

–40

+150

°C

–40

+150

°C

NOTES:

1. Test pulses are coupled to CANH through a series capacitance of 1 nF.

2. Rise time for test pulse 1: tr < 1 µs; pulse 2: tr < 100 ns; pulses 3a/3b: tr < 5 ns.

2001 May 18

6

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