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AZ494APTR(2009) 查看數據表(PDF) - BCD Semiconductor

零件编号
产品描述 (功能)
生产厂家
AZ494APTR
(Rev.:2009)
BCDSEMI
BCD Semiconductor BCDSEMI
AZ494APTR Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
PULSE-WIDTH-MODULATION CONTROL CIRCUITS
Absolute Maximum Ratings (Note 1)
Data Sheet
AZ494A/C
Parameter
Supply Voltage (Note 2)
Amplifier Input Voltage
Collector Output Voltage
Collector Output Current
Package Thermal Impedance
(Note 3)
Symbol
VCC
VI
VO
IO
RθJA
Lead Temperature 1.6mm from case for 10 seconds
Storage Temperature Range
ESD rating (Machine Model)
TSTG
Value
40
-0.3 to VCC + 0.3
40
250
M Package
73
P Package
67
260
-65 to 150
200
Unit
V
V
V
mA
oC/W
oC
oC
V
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the
device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum
Ratings"for extended periods may affect device reliability.
Note 2: All voltage values are with respect to the network ground terminal.
Note 3: Maximum power dissipation is a function of TJ(max), RθJA and TA. The maximum allowable power dissi-
pation at any allowable ambient temperature is PD = ( TJ(max) - TA )/RθJA. Operating at the absolute maximum TJ
of 150oC can affect reliability.
Recommended Operating Conditions
Parameter
Supply Voltage
Collector Output Voltage
Collector Output Current
(Each Transistor)
Amplifier Input Voltage
Current Into Feedback Terminal
Reference Output Current
Timing Capacitor
Timing Resistor
Oscillator Frequency
PWM Input Voltage (Pin 3, 4, 14)
Operating Free-Air Temperature
Symbol
VCC
VC1, VC2
IC1, IC2
VI
IFB
IREF
CT
RT
fosc
TA
Min
7
0.3
0.00047
1.8
1.0
0.3
-40
Sep. 2009 Rev. 1. 4
Typ
Max
Unit
15
36
V
30
36
V
200
mA
VCC - 2
V
0.3
mA
10
mA
0.001
10
µF
30
500
K
40
200
KHz
5.3
V
85
oC
BCD Semiconductor Manufacturing Limited
4

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