BA10339F(Old_V) 查看數據表（PDF） - ROHM Semiconductor
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BA10339F Datasheet PDF : 4 Pages
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Standard ICs
BA10339 / BA10339F / BA10339FV
•Absolute maximum ratings (Ta = 25°C)
Parameter
Limits
Symbol
Unit
BA10339 BA10339F BA10339FV
Power supply voltage
Power dissipation
VCC
36 ( ± 18) 36 ( ± 18) 36 ( ± 18)
V
Pd
950∗
450∗
400∗
mW
Differential input voltage
VID
± VCC
± VCC
± VCC
V
Common-mode input voltage
VI
– 0.3 ~ VCC – 0.3 ~ VCC – 0.3 ~ VCC
V
Operating temperature
Topr
– 40 ~ + 85 – 40 ~ + 85 – 40 ~ + 85
°C
Storage temperature
Tstg
– 55 ~ + 125 – 55 ~ + 125 – 55 ~ + 125
°C
∗ Refer to the Pd characteristic diagram.
∗ The Values for BA10339F and BA10339FV are those when it is mounted on a glass epoxy board (50mm × 50mm × 1.6mm).
•Electrical characteristics (unless otherwise noted, Ta = 25°C, VCC = + 5V)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input offset voltage
Input offset current
Input bias current
VIO
—
2
5
mV VO = 1.4V
IIO
—
5
50
nA | IIN + – IIN – | , VO = 1.4V
IB
—
25
250
nA VO = 1.4V
Common-mode input voltage VICM
0
— VCC – 1.5 V
—
Voltage gain
AV
—
106
—
dB RL = 15kΩ
Quiescent current
Output sink current
Output saturation voltage
Output leakage current
IQ
—
0.8
2
mA RL = ∞, on All Comparators
Isink
6
16
—
mA VIN– = 1V, VIN+ = 0V, VO = 1.5V
VOL
—
250
400
mV
VIN– = 1V, VIN+ = 0V, Isink = 3mA
Ileak
—
0.1
—
nA
VIN+ = 1V, VIN– = 0V, VO = 5V
Response time
tr
—
1.3
—
µs
RL = 5.1kΩ, VRL = 5V
•Electrical characteristic curves
1200
1000 BA10339
800
600
BA10339F
400
BA10339FV
200
0
0 25 50 75 85 100 125 150
AMBIENT TEMPERATURE: Ta (°C)
Fig. 1 Power dissipation vs. ambient
temperature
Ta = 25°C
1.2
RL = ∞
1.0
0.8
0.6
0
10
20
30
40
POWER SUPPLY VOLTAGE: V+ (V)
Fig. 2 Quiescent current vs. power
supply voltage
2
80
Ta = 25°C
60
40
20
00
10
20
30
40
POWER SUPPLY VOLTAGE: V– (V)
Fig. 3 Input bias current vs. power
supply voltage
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