BA3308FV 查看數據表（PDF） - ROHM Semiconductor
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BA3308FV Datasheet PDF : 10 Pages
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BA3308F,BA3308FV
●Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Supply voltage
VCC
16
V
Power
dissipation
BA3308F
Pd
BA3308FV
450*1
350*2
mW
Operating temperature
Topr －25～＋75 ℃
Storage temperature
Tstg －55～＋125 ℃
*1 Reduce by 4.5 mW/C over 25C, when mounted on a 70mm×70mm×1.6mm PCB board.
*2 Reduce by 3.5 mW/C over 25C
●Operating conditions(Ta=25℃)
Parameter
Symbol Min.
Typ.
Max.
Unit
Supply voltage
VCC
4.5
-
14
V
Note: This IC is not designed to be radiation-resistant.
Technical Note
●Electrical characteristics(Unless otherwise noted, Ta=25℃, Vcc=7.0V, f=1kHz, BPF20～20kHz)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Quiescent current
Open loop voltage gain
Total harmonic distortion
Input resistance
Maximum output voltage
Input conversion noise
voltage
ALC range
IQ
GVO
THD
RIN
VOM
VNIN
ALC
1.5
3.5
4.5
mA VIN=0Vrms
70 80
-
dB VOUT=-10dBV
-
0.1 0.3
% NAB34dB, VOUT=40mVrms
15
25
45
kΩ
0.6 1.2
-
1
40 45
-
Vrms THD=1%
2
μVrms
Rg=2.2kΩ, referenced to NAB 34dB
at 1kHz
-
dB
Rg=3.9 kΩ, VIN＝-70 dBV standard,
THD=3%
ALC channel balance
ΔALC
-
0
2.5
dB VIN=-60dBV,-30dBV
Channel separation
CS
60 75
-
dB VO=0dBV, NAB 34dB
Test
Circuit
Fig.17
Fig.17
Fig.17
Fig.17
Fig.17
Fig.17
Fig.17
Fig.17
Fig.17
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© 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.A
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