DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BA3308FV 查看數據表(PDF) - ROHM Semiconductor

零件编号
产品描述 (功能)
生产厂家
BA3308FV
ROHM
ROHM Semiconductor ROHM
BA3308FV Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BA3308F,BA3308FV
Technical Note
2. On playback
S. ince amplifier ch1 and ch2 are used as a NAB equalizer
amplifier at playback, a time constant circuit is established in
the NF section (1-11pin, 7-10pin) to obtain NAB
characteristics. The voltage gain at this time is determined by
the following formula:
GV = R11R9/ (│+jωC9R9)/R3
Obtain the necessary gain by regulating the (power-on pop
noise prevention) NAB time constant circuit in the same way
when regulating the gain at recording stage. The operating
point of the output stage (1,7pin) is fixed at 3VF.
Accordingly, even if VCC is raised to 5V or more, as in the
VMAX-VCC characteristic (Fig.13), the maximum output voltage
does not rise above 1.2V (Typ.). 4pin is grounded at playback
since ALC is not needed. For better signal-to-noise ratio
characteristics at playback, don’t use R1 and R2, which are
attached to the input pin (13pin, 9pin).
BA3308
A1
123((98))
C1
(C2)
10μF
111(1(09))
R3
(R4)
39
R11
(R12)
4.3k
C3
(C4)
100μF
R9
(R10)
120k
31 ((77))
C9 0.027μF
(C10)
45
C5
(C6)
10μF
INPUT
Fig.16
Fig.7
OUTPUT
www.rohm.com
6/9
© 2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.A

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]