BAS170WS-V(2007) 查看數據表（PDF） - Vishay Semiconductors
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BAS170WS-V Datasheet PDF : 4 Pages
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BAS170WS-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air1)
Junction temperature
Operating temperature range
Storage temperature range
Test condition
Note:
1) Valid provided that electrodes are kept at ambient temperature
Symbol
RthJA
Tj
Tamb
Tstg
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Reverse breakdown voltage
IR = 10 µA (pulsed)
Leakage current
VR = 50 V
VR = 70 V
Forward voltage
IF = 1 mA
IF = 10 mA
Forward voltage1)
IF = 15 mA
Diode capacitance
VR = 0 V, f = 1 MHz
Differential forward resistance IE = 5 mA, f = 10 kHz
Note:
1) Pulse test; tp ≤ 300 µs
Symbol
Min
V(BR)
70
IR
IR
VF
VF
VF
CD
RF
Package Dimensions in millimeters (inches): SOD323
Value
Unit
650
K/W
125
°C
- 65 to + 125
°C
- 65 to + 125
°C
Typ.
Max
Unit
V
0.1
µA
10
µA
375
410
mV
705
750
mV
880
1000
mV
1.5
2
pF
34
Ω
17443
www.vishay.com
2
Document Number 85653
Rev. 1.6, 02-Jul-07
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