BAS21H 查看數據表（PDF） - Willas Electronic Corp.

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BAS21H

200mA Surface Mount Switching Diode-250V

Willas Electronic Corp. 

WILLAS

200mA Surface Mount Switching Diode-250V

1.0A SURFACE MOUNT SCHOTTKYSOBADR-3R2IE3RPRaEcCkTaIgFIeERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

BAS21FHM1T2H0R0U-M

Pb Free Produc

Features

• Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

• Low profile surface mounted application in order to

optimize board space.

• LoHw pIGowHer loVssO, hLigThAefGficiEency.

• High current capability, low forward voltage drop.

• HiSghWsurIgTeCcaHpaIbNiliGty. DIODE

• Guardring for overvoltage protection.

• Ultra high-speed switching.

• Silicon epitaxial planar chip, meta1l silicon junction.

• Lead-free parts meet environmCeAnTtHaOl sDtEandards of

2

ANODE

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Mechanical data

• Epoxy : UL94-V0 rated flamOe RreDtaErRdaINnGt INFORMATION

• Case : MDeovldiceed plastic, SODM-1a2r3kHing

Shipping

• TermBinAaSls21:PHlated terminals, sJoSlderable per MIL-3S0T00D/T-7a5pe0,& Reel

Pb-FreMe eptahcokda2g0e26is available

• PolaRriotyH:SInpdriocdautecdt fboyr cpaatchkoidnegbcaondde suffix ”G”

• MouHnatilnoggPenosfirteioenp:rAondyuct for packing code suffix “H”

• WeigMhoti:sAtuprperoSxeimnsaitteivdit0y.0L1e1vgerla1m

Package outline

SOD-123H

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

0.031(0.8) Typ.

SOD– 323

0.040(1.0)

0.024(0.6)

MARKING DIAGRAM

0.031(0.8) Typ.

JS

Dimensions in inches and (millimeters)

JS = Device Code

MAXIMUMMRAAXTIMINUGSM RATINGS AND ELECTRICAL CHARACTERISTICS Polarity: Color band denotes cathode end

Ratings at 25℃ Ramatbiniegnt temperature unless otherwise speScyifmiedb.ol

Value

Unit

Single phaCsoenhtianluf owuasveR,e6v0eHrsze, rVeoslitsatgivee of inductive load. VR

250

Vdc

For capacPitievaekloFaodr,wdaerrdatCeucrurerrnetnt by 20%

IF

200

mAdc

Peak ForwaRrdATSIuNrgGeSCurrent

SYMBOLIFFMM(su1rg2e0) -MH FM130-M6H2F5M140-MH FM1m50A-MdcH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

Marking Code

12

13

14

15

16

18

10

115 120

MaximuTmHREeRcMurAreLntCPHeAakRRAeCveTrEseRVISoTltaICgeS

Maximum RMS VoltCaghearacteristic

Maximum DTCotBalloDckeivnigceVoDltisasgiepation FR–5 Board,*

VRRM

20

VRMS Sym1b4ol

VDC

PD20

30

40

21 Max 28

30 200 40

50

60

3U5 nit 42

50mW 60

80

100

150

200

56

70

105

140

80

100

150

200

Maximum AveTraAg=e2F5o°Crward Rectified Current

IO

1.0

Derate above 25°C

Peak ForwarTdhSeurmrgealCRuerrseinstta8.n3cmesJsuinngclteiohnaltfosiAnem-wbiaevnet

superimposed on rated load (JEDEC method)

Junction and Storage

Typical TheTrmemalpReerasitsutraencRea(nNgoete 2)

Typical Junction Capacitance (Note 1)

Operati*nFgRT–e5mMpienrimatuurme PRaadnge

IFSM

RΘJA

CJ

TJ

RθJA

TJ, Tstg

1.57

635

–55 to+150

-55 to +125

StorageETLeEmCpTerRatIuCreARLanCgHe ARACTERISTICS (TA = 2T5S°TCGunless otherwise noted)

Characteristic

Symbol

Min

mW/°C

°C/W

30

°C

40

120

-55 to +150

- 65 to +175

Max

Unit

OFF CHARCAHCATREARCTISETRIICSSTICS

Maximum ForRweavrderVsoeltVaogeltaagte1.L0eAaDkCage Current

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

VF

I R 0.50

0.70

µAdc0.85

0.9

0.92

Maximum Av(eVraRg=e R20e0veVrsdecC) urrent at @T A=25℃

IR

Rated DC Blo(cVkRin=g2V0o0ltaVgdec, TJ = 150°C@) T A=125℃

–

0 0.5

–

100 10

Reverse Breakdown Voltage

NOTES:

(IBR = 100 µAdc)

1- Measured aFt 1orMwHaZrdanVdoaltpapglieed reverse voltage of 4.0 VDC.

2- Thermal Re(sIiFst=an1c0e0FrmomAdJucn) ction to Ambient

V(BR)

VF

250

–

Vdc

mV

–

1000

(IF = 200 mAdc)

–

1250

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

–

5.0

pF

Reverse Recovery Time

(IF = IR = 30 mAdc, RL = 100 Ω)

trr

–

50

ns

2012-06

WILLAS ELECTRONIC COR

2012-1

WILLAS ELECTRONIC CORP.

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