BAS21H 查看數據表（PDF） - Willas Electronic Corp.
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BAS21H Datasheet PDF : 3 Pages
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WILLAS
200mA Surface Mount Switching Diode-250V
1.0A SURFACE MOUNT SCHOTTKYSBOADR-3R2IE3RPRaEcCkTaIFgIeERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BAS21FHM1T2H0R0U-M
Pb Free Produc
Features
• Batch process design, excellent power dissipation offers
Package outline
BAS21H
better reverse leakage current and thermal resistance.
82•0LΩow profile surface mounted application in order to
SOD-123H
+10 V
optimize board space.
• Low pow2 ek r loss, high efficiency. 0.1 µF
• High cur1r0e0nµtHcapaIbFility, low forward voltage drop.
tr
tp
t
IF
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
• High0.s1uµrFge capability.
10%
• Guardring for overvoltage protection.
trr
t
• Ultra high-speed switchDinUTg.
50 Ω OU•TSPiUliTcon epitaxial planar chip, metal s5il0icΩonINjPuUnTction.
PUL•SELead-free parts meet environmental SsAtaMnPdLIaNrGds of
GENERATMOIRL-STD-19500 /228
OSCILLOSCOPE
• RoHS product for packing code suffix "G"
VR
Halogen free product for packing code suffix "H"
Mechanical data
90%
INPUT SIGNAL
0.071(1.8)
0.056(1.4)
IR
iR(REC) = 3.0 mA
OUTPUT PULSE
(IF = IR = 30 mA; measured
at iR(REC) = 3.0 mA)
• Epoxy : UL94-VN0otreast:e1d. Afla2m.0ekrΩetvaarrdiaabnlet resistor adjusted for a Forward Current (IF) of 30 mA.
•
Case
:
M o l d e dNpol atesst:i c2,. SInOpDut-p1u2l3seH is
Notes: 3. tp » trr
adjusted
so
IR(peak)
is
equal
,
to
30
mA.
0.031(0.8)
Typ.
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026 Figure 1. Recovery Time Equivalent Test Circuit
• Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
• Mounting Position : Any
1200
7000
• Weight : Approximated 0.011 gram
6000
1000 MAXIMUM RATINGS AND ELECTRICAL CH5A00R0 ACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
4000
Single pha8s00e half wave, 60Hz, resistive of inductive load.
3000
For capacitive load, derate current by 20%
600
RATINGS
Marking Code
Maximum R4e00current Peak Reverse Voltage
SYMBOL FM120-MH FM1360-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
135
14
15
16
18
10
115 120
VRRM
20
304
40
50
60
80
100
150
200
Maximum RMS Voltage
VRMS
14
213
28
35
42
56
70
105
140
Maximum D2C00Blocking Voltage
VDC
20
302
40
50
60
80
100
150
200
Maximum Average Forward Rectified Current
IO
1
Peak Forward S1urge Current 8.3 m10s single half sine1-w00ave IFSM 1000
superimposed on rated load (JIEF,DFEOCRmWeAthRodD) CURRENT (mA)
Typical Thermal ResistanceF(iNgoutere2)1. Forward VoltagReΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
1
0
1
2
-55 to +125
1.0
5
10
230 0
50
100 200 300
VR, REVERSE VOLTAGE (V)
Figure 2. Re1v42e00rse Leakage
-55 to +150
Storage Temperature Range
TSTG
- 65 to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
0.50
0.70
0.85
0.9
0.92
IR
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-1
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
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